MRF6S18100NR1 MRF6S18100NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
—
1930--1990 MHz
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
13
1900
20
Gps
VDD
=28Vdc
IDQ
= 900 mA
17 60
50
40
30
2020
IRL
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 100 Watts
-- 3 0
0
-- 1 0
-- 2 0
-- 4 0
η
D
, DRAIN EFFICIENCY (%)
16
15
14
ηD
1920 1940 1960 1980 2000
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
13
1900
20
Gps
VDD
=28Vdc
IDQ
= 900 mA
17 60
50
40
30
2020
IRL
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 40 Watts
-- 3 0
0
-- 1 0
-- 2 0
-- 4 0
η
D
, DRAIN EFFICIENCY (%)
16
15
14
ηD
1920 1940 1960 1980 2000
Figure 5. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
VDD
=28Vdc
f = 1960 MHz
1125 mA
IDQ
= 1350 mA
10
11
1
16
14
13
12
100
G
ps
, POWER GAIN (dB)
15
900 mA
665 mA
450 mA
20 16040
60 80
100 120 140
2
0
16
12
10
6
4
Figure 6. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
=24V
28 V
IDQ
= 900 mA
f = 1960 MHz
G
ps
, POWER GAIN (dB)
32 V
14
8
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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